- Scholarship in 1986 at University of Glasgow
Rebecca Cheung received her secondary and tertiary education in
Scotland. After obtaining a first class honours degree in Electronics
and Electrical
Engineering from the University of Glasgow, she was awarded a
Scholarship from the Croucher Foundation to study towards a Ph.D, which
she received from the same University in 1990. During her Ph.D,
she was a visiting researcher with the
Semiconductor Technology Group at IBM Thomas J. Watson Research
Centre in Yorktown Heights, USA, where high density plasma etching
techniques
were developed for GaAs. The process-induced material damage was
characterised using x-ray photoelectron spectroscopy and quantum
transport techniques.