- Scholarship in 1986 at University of Glasgow
Rebecca Cheung received her secondary and tertiary education in Scotland. After obtaining a first class honours degree in Electronics and Electrical Engineering from the University of Glasgow, she was awarded a Scholarship from the Croucher Foundation to study towards a Ph.D, which she received from the same University in 1990. During her Ph.D, she was a visiting researcher with the Semiconductor Technology Group at IBM Thomas J. Watson Research Centre in Yorktown Heights, USA, where high density plasma etching techniques were developed for GaAs. The process-induced material damage was characterised using x-ray photoelectron spectroscopy and quantum transport techniques.